“The End of Modularity – Charging Commercial Vehicles with MW of Power”
Dr. Martin Schulz highlights a solution that exceeds 99.7% efficiency in energy conversion, reducing the resources needed and massively improving the TCO-situation for charge-point operators.
“Take Charge with Littelfuse”
Philippe Di Fulvio discusses a solution helping design engineers meet safety and power density challenges in DC fast-charging stations.
Since our founding in 1927, Littelfuse has pioneered innovative products that have driven technological advances in the automotive industry. That commitment continues today. The future of cars and mobility is electric. Our application experts are ready to help you build safety, efficiency, and reliability into your designs.
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The SJxx32xxA and SJxx40xxA series are AEC-Q101 qualified SCRs especially designed for Automotive Industry applications. Non-isolated packages are marked by a notch on one pin. This new 600 V series of devices offers current ratings of ITRMS = 20 A, 25 A, 32 A and 40 A. Two different technological options are available, optimized for either low gate current requirement down to 6 mA or high dv/dt-immunity.
The new 200 V X4-Class Ultra Junction MOSFET is available in 60 A nominal current rating in TO-247, TO-263, and TO-220 packages. These Power MOSFETs feature a reduced channel resistance RDS(on). This new family exhibits a significant reduction in the figure of merit (FOM) RDS(on) x Qg compared to its predecessor X3. These benefits enable designers to achieve higher efficiency and increased power density.
The new 200 V Ultra Junction X4-Class MOSFETs are rated at 120 A nominal current in TO-247 and TO-220 packages. These Power MOSFETs feature significantly reduced channel resistance RDS(on), improving the figure of merit (FOM) RDS(on) x RthJC compared to its predecessor X3-Class. These benefits enable designers to achieve higher efficiency using simplified thermal design.
The all-new 1200V XPT™ Gen4™ Trench IGBTs 110 A are the latest addition to the discrete IGBT product portfolio. The B4-Series consists of medium-speed devices, optimized for switching frequencies from 5 kHz to 30 kHz. Thin wafer technology and improved processes lead to a low gate charge Qg, hence, low gate-current requirements. Nonrepetitive peak collector current capability for 1 ms at TC=25°C is rated up to 7 times nominal current. The positive temperature coefficient of the forward-voltage simplifies paralleling. Devices with high current carrying capability of up to 110 A are available. These new members in the family offer improved thermal performance in PLUS247 and TO264 package.
The all-new 1200V XPT™ Gen4™ Trench IGBTs are the latest addition to the discrete IGBT product portfolio. The C4-Series consists of highspeed devices, optimized for switching frequency from 20 kHz to 60 kHz. Thin wafer technology and improved processes lead to low gate charge Qg, hence, low gate-current requirements. Non-repetitive peak collector current capability for 1 ms at TC=25°C is rated up to 7 times nominal current. The positive temperature coefficient of forward-voltage simplifies paralleling. Devices with high current carrying capability of up to 110 A are available. The new family offers improved thermal performance in a wide range of packages like SOT-227B, PLUS247, TO-264 and TO-247 package.
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