The challenge in power electronics is to achieve higher power throughput in smaller housings, using fewer resources, while increasing efficiency and reducing cost. As these targets involve contradicting solutions, compromises must be made. Higher currents increase thermal stress in a given device, reducing its lifetime. To counteract this, exchanging IGBTs with wide band gap SiC-MOSFETs is considered. However, the solution tends to be more expensive. Adopting an approach similar to that used in press-pack-devices and allowing electrically active heat sinks opens the path to massive improvement.
This paper demonstrates how this concept can be applied to IGBT-based designs.
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