Solve Your SiC MOSFET Gate Drive Challenges
Introducing the New IX4351NE SiC Gate Driver
The IX4351NE is designed specifically to drive SiC MOSFETs and high power IGBTs.
Separate 9A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses.
An internal negative charge regulator provides a selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.
Download the datasheet to learn more.
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