The Dynamic Characterization Platform from Littelfuse is designed to:
Measure:
MOSFET switching losses, switching times, and gate charge accurately
Schottky Barrier Diode (SBD) and body diode reverse recovery accurately
Provide an informed reference design for gate drive and power loop PCB layout
Provide informed recommendations for gate drive layout and components
Promote streamlined device validation and quicker design cycles
The Dynamic Characterization Platform (DCP) enables design engineers try to characterize the high performance Silicon Carbide (SiC) MOSFETs and diodes offered by Littelfuse with high accuracy.
Functionality highlights of this evaluation kit include:
Designed for TO-247-3L SiC MOSFETs and TO-220-2L SiC Schottky Barrier Diodes
Power loop and gate drive circuitry optimized for ultra-fast dV/dt and dI/dt events
Integrated input signal and measurement probe interface connections
Complete the form to download the Application Note and learn more.
